There is a local version available of this page. Change to the local version?
United States

Semiconductors

Foreign material elemental analysis of defective parts on SiC wafers

Identification of foreign elements that cause defects on SiC wafers

After confirming the defective area using an X-ray transmission image, the cause of the defect can be identified using elemental analysis.

Pedido de Informação

Você tem alguma dúvida ou solicitação? Utilize este formulário para entrar em contato com nossos especialistas.

* Esses campos são obrigatórios.

Browse all applications related to foreign material elemental analysis

You might also like to know