There is a local version available of this page. Change to the local version?
United States

Applications

Colocalized AFM-Raman Analysis of 2D Materials Heterostructures

True colocalized topographic, electrical, and chemical characterization of Van der Waals heterostructures

Colocalized AFM-Raman Analysis of 2D Materials Heterostructures

This application note reports on colocalized AFM-Raman measurements of vertical Van der Waals heterostructures of 2D materials: hBN/graphene/WSe2 and graphite gate/hBN/bilayer graphene/hBN. Topographic, contact potential difference, and Raman data are generated on same location with the same tip using a fully integrated AFM-Raman microscope, the new SignatureSPM.

Request for Information

Do you have any questions or requests? Use this form to contact our specialists.

* These fields are mandatory.

Corporate