Emerging display technologies demand high brightness, low power consumption and longer lifetime. Arrays, of self-emitting, micron-sized LEDs or Micro-LED (µLED), are considered a strong contender to replace current OLED or LCD displays.

Phosphor plays a key role to obtain white light as for blue LED + phosphor and near ultraviolet LED + phosphors. In order to improve high bright white LEDs, it is necessary that the whole phosphor particle emits light homogeneously. When measuring with CL the phosphor used as white LED, the area which does not emit light in phosphor particle can be observed. CL system is used for evaluation of non-luminescent area to improve luminescent efficiency and characteristics.

Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.

CMP technology is essential in the manufacturing process of large scale semiconductor integrated circuits (LSI). Colloidal silica are widely used as CMP slurries because of their clean spherical shape. Colloidal silica was measured by Partica CENTRIFUGE and its measurement repeatability was confirmed.

Raman spectroscopy is a very well suited technique to determine both Ge fraction and strain in SiGe layers and Si cap layers. Moreover the possibility of using both UV and visible excitation lines on the same instrument is essential to study structures made up of a Silicon cap layer on top of a SiGe layer. The relative Ge content in the constant Si1-xGex layer is calculated from the visible Raman spectrum and the strain of the cap Si layer is derived from the UV Raman spectrum.

Carbon nanotubes (CNTs) are thin, light, and flexible string-like materials that are composed entirely of carbon atoms. CNTs easily aggregate, so it is essential to understand and control the state of aggregation in order to achieve the expected performance. For this purpose, an analytical method that can quickly evaluate wide particle size distributions (PSD) from isolated dispersion to aggregation, with high resolution, is necessary.

The concentration of oxygen in silicon wafers has a significant impact on their electrical resistance. Therefore, it is crucial to control the concentration of oxygen, even in extremely small amounts, in silicon wafers. However, a challenge arises when analyzing highly doped single crystals. Due to their unique properties and high doping levels, the analysis of oxygen in these samples becomes more difficult. The presence of impurities and dopants can interfere with the accurate measurement of oxygen concentration using FT-IR spectroscopy.

Liquid Crystal Modulation Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of the compound semiconductor heterostructure AlGaN / GaN. Using the MM-16 spectroscopic ellipsometer it is a straightforward procedure to determine the film thickness and optical dispersions of the complete structure even where the film is several microns thick. The detailed knowledge of the optical parameters of AlGaN alloys is crucial for example for the design of opto-electronic devices. Furthermore, from the optical parameters a calibration curve could be constructed to provide a rapid and efficient determination of the Al content in the AlGaN layers. Thus Spectroscopic Ellipsometry also proves a non-destructive technique for AlGaN alloy composition determination. This method can be equally applied to other compound emiconductors such as SiGe, II-VI semiconductors or classical III-V semiconductors.