Micro area crystal defect evaluation

High spatial resolution defect evaluation using TEPL

It is possible to analyze the crystallinity, number of layers, etc. of minute regions of two-dimensional materials, which are next-generation semiconductor materials.

Cathodoluminescence measurement system HORIBA CLUE series

Can be added to existing electron microscopes
Compatible with measurements at ultraviolet to near-infrared wavelengths (200 to 2,100 nm)
SEM integrated high range CL imaging device (Imaging CL) can also be proposed.

AFM (atomic force microscope) Raman XploRA Nano

Acquire physical information by AFM and chemical information by Raman simultaneously
Stress distribution analysis on the outermost surface on the order of nm is possible.

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