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Semiconductors

Crystal Defect Analysis for Semiconductor Raw Materials

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Reducing defects and precisely controlling impurities have become increasingly important in semiconductor devices for high-speed communication. We will introduce analysis cases illustrating this.

Compound semiconductor wafer defect evaluation
- Non-destructive wafer defect distribution evaluation using PL mapping
- Full-surface high-speed defect evaluation of 3-inch InGaP wafers
- GaN wafer defect classification evaluation
- Analysis of the same area using steady PL spectra and time-resolved measurements
Micro area crystal defect evaluation
- High spatial resolution defect evaluation using TEPL
Impurity analysis in compound semiconductor wafers
- Impurity analysis in GaAs wafers by cathodoluminescence
Browse all applications related to crystal defect analysis

Cathodoluminescence measurement system HORIBA CLUE series

Can be added to existing electron microscopes
Compatible with measurements at ultraviolet to near-infrared wavelengths (200 to 2,100 nm)
SEM integrated high range CL imaging device (Imaging CL) can also be proposed.

AFM (atomic force microscope) Raman XploRA Nano

Acquire physical information by AFM and chemical information by Raman simultaneously
Stress distribution analysis on the outermost surface on the order of nm is possible.

Browse all applications related to Crystal defect analysis

Emerging display technologies demand high brightness, low power consumption and longer lifetime. Arrays, of self-emitting, micron-sized LEDs or Micro-LED (µLED), are considered a strong contender to replace current OLED or LCD displays.

The SEM and the CL image of phosphor used as white LED.

Phosphor plays a key role to obtain white light as for blue LED + phosphor and near ultraviolet LED + phosphors. In order to improve high bright white LEDs, it is necessary that the whole phosphor particle emits light homogeneously. When measuring with CL the phosphor used as white LED, the area which does not emit light in phosphor particle can be observed. CL system is used for evaluation of non-luminescent area to improve luminescent efficiency and characteristics.

Fabrication of the diamond micro-pillars

The characterization of synthetic CVD diamond material by hyperspectral cathodoluminescence spectroscopy and imaging allows the detection and accurate location of the promising NV luminescent point defects for innovative solid-state quantum mechanical systems. In this work we performed CVD epitaxial growth on a pattern of micro-pillars etched on a diamond substrate. Cathodoluminescence (CL) analysis revealed that NV centres were successfully localized at the edges of the pillars.

The defect density can be evaluated from the intensity image obtained by CL measurement.

The threading dislocation occurs easily in GaN crystal grown on sapphire substrates. It is said that this is caused by the large lattice mismatch of sapphire and GaN. The crystal may seem to be uniform in the SEM image, but the dark spot such as the threading dislocation can be observed when measuring the CL intensity image at the wavelength (362nm) which corresponds to the band edge emission.

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