Stress analysis of SiC

SiC combined analysis by Raman and CL

Residual stress in SiC is determined by peak shift amount of 776cm-1

Since the position of the defect in the cathodoluminescence (CL) image matches the position of the peak shift change, defects inside the wafer that cannot be seen in the CL image can be predicted from the Raman peak shift.

Microscopic Raman spectrometer LabRAM Odyssey

Industry's highest level* stress resolution (*according to our research in 2022)
Capable of mapping up to 12 inch wafers
Temperature control holder can be used (please consult us separately regarding sample size)

AFM (atomic force microscope) Raman XploRA Nano

Acquire physical information by AFM and chemical information by Raman simultaneously
Stress distribution analysis on the outermost surface on the order of nm is possible.