There is a local version available of this page. Change to the local version?
United States

Semiconductors

SiC carrier lifetime analysis

Carrier lifetime analysis of different SiC film formation conditions by PL lifetime measurement

Substrates with a large amount of dopant have a short PL lifetime and a PL peak appears around 500 nm.

Fluorescence lifetime measurement device DeltaFlex

  • Observe differences in carrier life by measuring PL life
  • Diverse light source wavelength repertoire
  • Supports a wide range of PL life from picoseconds to several seconds

留言咨询

如您有任何疑问,请在此留下详细需求信息,我们将竭诚为您服务。

* 这些字段为必填项。